AM2300N these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ?low r ds(on) provides higher efficiency and extends battery life ? low gate charge 7nc ? high performance ? high current handling ? miniature sot-23 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g v ds (v) r ds ( on ) ( ? )i d (a) 0.035 @ v gs = 4.5v 4.3 0.050 @ v gs = 2.5v 3.5 20 product summary symbol maximum units v ds 20 v gs 8 t a =25 o c4.3 t a =70 o c3.3 i dm 10 i s 0.46 a t a =25 o c1.25 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 5 sec 100 steady-state 166 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.7 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 4.3 a 30 35 v gs = 2.5 v, i d = 3.5 a 40 50 forward tranconductance a g fs v ds = 5 v, i d = 3.0 a 11 s diode forward voltage v sd i s = 0.46 a, v gs = 0 v 0.651.20v total gate charge q g 7.0 gate-source charge q gs 1.20 gate-drain charge q g d 1.90 input capacitance c iss 700 output capacitance c oss 175 reverse transfer capacitance c rss 85 turn-on delay time t d(on) 9 rise time t r 11 turn-off delay time t d(off) 18 fall-time t f 5 pf parameter limits unit v dd = 10 v , i d = 1 a , r g = 6 ? , v gen = 4.5 v ns drain-source on-resistance a dynamic b v ds = 10 v, v gs = 4.5 v, i d = 3.0 a nc m ? r ds(on) v ds = 15 v, v gs = 0 v, f = 1mhz specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol AM2300N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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